NSI45060DDT4G【PDF 2/6 页】IC LED DRIVER/REG CCR DPAK

NSI45060DDT4G

http://onsemi.com

2

MAXIMUM RATINGS (T

A

= 25癈 unless otherwise noted)

Rating

Symbol

Value

Unit

AnodeCathode Voltage

Vak Max

45

V

Reverse Voltage

V

R

500

mV

Operating and Storage Junction Temperature Range

T

J

, T

stg

55 to +150

癈

ESD Rating:

Human Body Model

Machine Model

ESD

Class 2

Class B

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

ELECTRICAL CHARACTERISTICS (T

A

= 25癈 unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Steady State Current @ Vak = 7.5 V (Note 1)

I

reg(SS)

51

60

69

mA

Voltage Overhead (Note 2)

V

overhead

1.8

V

Pulse Current @ Vak = 7.5 V (Note 3)

I

reg(P)

54.7

66

76.95

mA

Capacitance @ Vak = 7.5 V (Note 4)

C

17

pF

Capacitance @ Vak = 0 V (Note 4)

C

70

pF

1. I

reg(SS)

steady state is the voltage (Vak) applied for a time duration e 80 sec, using FR4 @ 300 mm

2

2 oz. Copper traces, in still air.

2. V

overhead

= V

in

V

LEDs

. V

overhead

is typical value for 65% I

reg(SS)

.

3. I

reg(P)

nonrepetitive pulse test. Pulse width t d 300 msec.

4. f = 1 MHz, 0.02 V RMS.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation (Note 5) T

A

= 25癈

Derate above 25癈

P

D

1771

14.16

mW

mW/癈

Thermal Resistance, JunctiontoAmbient (Note 5)

R

?SPAN class="pst NSI45060DDT4G_2467096_5">JA

70.6

癈/W

Thermal Reference, JunctiontoLead 4 (Note 5)

R

?SPAN class="pst NSI45060DDT4G_2467096_5">JL4

6.8

癈/W

Total Device Dissipation (Note 6) T

A

= 25癈

Derate above 25癈

P

D

2083

16.67

mW

mW/癈

Thermal Resistance, JunctiontoAmbient (Note 6)

R

?/DIV>

JA

60

癈/W

Thermal Reference, JunctiontoLead 4 (Note 6)

R

?/DIV>

JL4

6.3

癈/W

Total Device Dissipation (Note 7) T

A

= 25癈

Derate above 25癈

P

D

2080

16.64

mW

mW/癈

Thermal Resistance, JunctiontoAmbient (Note 7)

R

?SPAN class="pst NSI45060DDT4G_2467096_5">JA

60.1

癈/W

Thermal Reference, JunctiontoLead 4 (Note 7)

R

?SPAN class="pst NSI45060DDT4G_2467096_5">JL4

6.5

癈/W

Total Device Dissipation (Note 8) T

A

= 25癈

Derate above 25癈

P

D

2441

19.53

mW

mW/癈

Thermal Resistance, JunctiontoAmbient (Note 8)

R

?SPAN class="pst NSI45060DDT4G_2467096_5">JA

51.2

癈/W

Thermal Reference, JunctiontoLead 4 (Note 8)

R

?/DIV>

JL4

5.9

癈/W

Total Device Dissipation (Note 9) T

A

= 25癈

Derate above 25癈

P

D

2309

18.47

mW

mW/癈

Thermal Resistance, JunctiontoAmbient (Note 9)

R

?SPAN class="pst NSI45060DDT4G_2467096_5">JA

54.1

癈/W

Thermal Reference, JunctiontoLead 4 (Note 9)

R

?/DIV>

JL4

6.2

癈/W

Total Device Dissipation (Note 10) T

A

= 25癈

Derate above 25癈

P

D

2713

21.71

mW

mW/癈

Thermal Resistance, JunctiontoAmbient (Note 10)

R

?SPAN class="pst NSI45060DDT4G_2467096_5">JA

46.1

癈/W

Thermal Reference, JunctiontoLead 4 (Note 10)

R

?SPAN class="pst NSI45060DDT4G_2467096_5">JL4

5.7

癈/W

Junction and Storage Temperature Range

T

J

, T

stg

55 to +150

癈

NOTE: Lead measurements are made by noncontact methods such as IR with treated surface to increase emissivity to 0.9.

Lead temperature measurement by attaching a T/C may yield values as high as 30% higher 癈/W values based upon empirical

measurements and method of attachment.

5. FR4 @ 300 mm

2

, 1 oz. copper traces, still air.

6. FR4 @ 300 mm

2

, 2 oz. copper traces, still air.

7. FR4 @ 500 mm

2

, 1 oz. copper traces, still air.

8. FR4 @ 500 mm

2

, 2 oz. copper traces, still air.

9. FR4 @ 700 mm

2

, 1 oz. copper traces, still air.

10.FR4 @ 700 mm

2

, 2 oz. copper traces, still air.

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